ISBN: 978-981-11-3671-9 DOI: 10.18178/wcse.2017.06.179
Modeling and Evaluation of Single Event Effects in 90nm MOS Devices
Abstract— With the simulation results of the single event effects (SEE) of 90nm metal-oxide-semiconductor
(MOS), the influence of incident angle of leakage current was studied. Based on the noise theory of carrier
number fluctuation and mobility fluctuation, a semi-empirical formula with respect to both the pre-irradiation
1/f noise and the sensitivity of single event effect was derived in details. In 90nm MOS drain in single event
effects there exist a current pulse peak, with which the critical value of 1/f noise amplitude was proposed. By
comparison between the threshold value and pre-irradiation 1/f noise, a non-destructive method was proposed
to preliminary predict and estimate the single event effect for 90nm MOS devices. The experiments are
carried out and the results agree well with the established formula.
Index Terms— 90nm MOS, single event effect, 1/f noise.
Zhenhuan Wu, Yuhe Li, Zhendong Qiao, Jiahua Kou, Pengnian Yang
Department of Precision Instrument, Collaborative Innovation Center of Advanced Nuclear Energy Technology, Tsinghua University, CHINA
ISBN: 978-981-11-3671-9 DOI: 10.18178/wcse.2017.06.17Xsrc="http://www.wcse.org/uploadfile/2019/0823/20190823055609629.png" style="width: 120px; height: 68px;" />[Download]
Cite: Zhenhuan Wu, Yuhe Li, Zhendong Qiao, Jiahua Kou, Pengnian Yang, "Modeling and Evaluation of Single Event Effects in 90nm MOS Devices," Proceedings of 2017 the 7th International Workshop on Computer Science and Engineering, pp. 1033-1037, Beijing, 25-27 June, 2017.