ISBN: 978-981-11-3671-9 DOI: 10.18178/wcse.2017.06.150
The Estimation Method of 1/f Noise Parameters Based on Wavelet and Power Spectrum Estimation
Abstract— 1/f noise is closely related to the defects and damage inside the semiconductor device, and its
noise parameters can characterize the reliability and performance of semiconductor devices. The basic
characteristics of 1/f noise, the basic theory of wavelet transform and the basic principle of power spectrum
estimation are introduced in this paper. The noise simulation test system based on the embedded development
platform is designed and built, and the parameters of 1/f noise are estimated by the method based on the
wavelet and power spectrum estimation. The results show that the method based on wavelet and power
spectrum estimation has high accuracy and is suitable for 1/f noise parameter estimation under white noise
Index Terms— 1/f noise, wavelet, power spectrum, parameters estimation, semiconductor device.
Mao Li, Guofu Liu, Zicheng Guo
Department of Instrument Science and Technology, National University of Defense Technology, CHINA
Cite: Mao Li, Guofu Liu, Zicheng Guo, "The Estimation Method of 1/f Noise Parameters Based on Wavelet and Power Spectrum Estimation," Proceedings of 2017 the 7th International Workshop on Computer Science and Engineering, pp. 864-869, Beijing, 25-27 June, 2017.